WebBuy IRFF9110 HARRIS , Learn more about IRFF9110 HEXFET TRANSISTORS THRU-HOLE (TO-205AF), View the manufacturer, and stock, and datasheet pdf for the IRFF9110 at … WebParameter Max. Units ID @ Tc = 25°C Continuous Drain Current, VGS @ -10 V -1.1 ID @ Tc = 100°C Continuous Drain Current, VGS @ -10 V -0.69 IDM Pulsed Drain Current † -8.8 PD …
IRFF9110 datasheet - -100V Single P-Channel Hi-Rel MOSFET in a …
WebIRFF9110 -100V Single P-channel Hi-rel MOSFET in a TO-205AF Package . The HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance combined with WebTHRU-HOLE (TO-205AF) IRFF9110 100V, P-CHANNEL 01/23/01 www.irf.com 1 TO-39 Product Summary Part Number BVDSS RDS(on) ID Features: Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling For footnotes refer to the last page. IRFF9110 2 www.irf.com Thermal Resistance ... smart filter icon
Infineon Technologies AG IRFF9110 - Datasheet PDF & Tech Specs
http://njsemi.com/datasheets/IRFF9110%20-%20IRFF9113.pdf WebIRFF9110 P-Channel MOSFET. V DSS = 100V I D = 2.5A R DS(ON) = 1.2 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter Min. Typ. Max. Units V DSS Drain Source Breakdown Voltage 100 V I D Continuous Drain Current 2.5 A WebIRFF9110 Product details The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. smart filter vector