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HBM achieves higher bandwidth while using less power in a substantially smaller form factor than DDR4 or GDDR5. This is achieved by stacking up to eight DRAM dies and an optional base die which can include buffer circuitry and test logic. The stack is often connected to the memory controller on a GPU or CPU through a substrate, such as a silicon interposer. Alternatively, the memory die could be stacked directly on the CPU or GPU chip. Within the stack the die are verti… Web6 de mar. de 2014 · Increasing demand for higher-bandwidth DRAM drive TSV technology development. With the capacity of fine-pitch wide I/O [1], DRAM can be directly integrated on the interposer or host chip and communicate with the memory controller. However, there are many limitations, such as reliability and testability, in developing the technology. It is … how to store wood furniture in attic
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